PART |
Description |
Maker |
HY27US08121B-TIS HY27US16121B-TIP HY27US08121B-FPC |
64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 32M X 16 FLASH 3.3V PROM, 18 ns, PDSO48 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63
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HYNIX SEMICONDUCTOR INC
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N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
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AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
KFG1216D2M-DED KFG1216Q2M-DEB KFG1216Q2M-DED KFG12 |
RSM, TKF 15K 1/16W 5% 040 FLASH MEMORY 闪存 .025 SOCKET STRIPS 64M X 16 FLASH 1.8V PROM, 76 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
PF48F4444PPVTQ0 |
64M X 16 FLASH 1.8V PROM, 88 ns, PBGA80
|
NUMONYX
|
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
AT25DF321-S3U |
16-SOIC,IND TEMP, GREEN(BIOS FLASH) 4M X 8 FLASH 2.7V PROM, PDSO16
|
Atmel, Corp.
|
JS28F00AP33BF |
64M X 16 FLASH 3V PROM, 105 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56
|
Numonyx Asia Pacific Pte, Ltd.
|
LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44 1M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO44 2M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp. SHARP ELECTRONICS CORP
|
AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68 1M X 32 FLASH 3V PROM, 120 ns, CQFP68
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Micross Components
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